Interchain migration of electrons and holes in polysilanes

被引：11

作者：

Kumagai, J ^{[1
]}

Tachikawa, H ^{[1
]}

Yoshida, H ^{[1
]}

Ichikawa, T ^{[1
]}

机构：

[1] HOKKAIDO UNIV,GRAD SCH ENGN,DEPT MOL CHEM,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1996年 / 100卷 / 42期

关键词：

D O I：

10.1021/jp961004m

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The measurements of the ESR and optical absorption spectra of polysilane radical ions revealed that the hole in the radical cation is delocalized onto the side chains, whereas the excess electron in the radical anion is confined within the silicon main chain. This observation suggests that the side chains hinder the interchain hopping of the charge for the anion but not the cation. Therefore the hole is the primary charge carrier in polysilanes.

引用

页码：16777 / 16778

页数：2

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