Giant magnetoresistance in transition metal oxides

被引：143

作者：

Rao, CNR ^{[1
]}

Cheetham, AK ^{[1
]}

机构：

[1] INDIAN INST SCI,BANGALORE 560012,KARNATAKA,INDIA

来源：

SCIENCE | 1996年 / 272卷 / 5260期

关键词：

D O I：

10.1126/science.272.5260.369

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

[No abstract available]

引用

页码：369 / 370

页数：2

共 26 条

[1] A STRUCTURAL PHASE-TRANSITION INDUCED BY AN EXTERNAL MAGNETIC-FIELD [J].

ASAMITSU, A ;

MORITOMO, Y ;

TOMIOKA, Y ;

ARIMA, T ;

TOKURA, Y .

NATURE, 1995, 373 (6513) :407-409

[2] SEMIMAGNETIC SEMICONDUCTORS [J].

BRANDT, NB ;

MOSHCHALKOV, VV .

ADVANCES IN PHYSICS, 1984, 33 (03) :193-256

[3] A CLASS OF COBALT OXIDE MAGNETORESISTANCE MATERIALS DISCOVERED WITH COMBINATORIAL SYNTHESIS [J].

BRICENO, G ;

CHANG, HY ;

SUN, XD ;

SCHULTZ, PG ;

XIANG, XD .

SCIENCE, 1995, 270 (5234) :273-275

[4] UP TO 50,000 PERCENT RESISTANCE VARIATION IN MAGNETORESISTIVE POLYCRYSTALLINE PEROVSKITES LN(2/3)SR(1/3)MNO(3) (LN=ND, SM) [J].

CAIGNAERT, V ;

MAIGNAN, A ;

RAVEAU, B .

SOLID STATE COMMUNICATIONS, 1995, 95 (06) :357-359

[5] MAGNETORESISTANCE IN MAGNETIC MANGANESE OXIDE WITH INTRINSIC ANTIFERROMAGNETIC SPIN STRUCTURE [J].

CHAHARA, K ;

OHNO, T ;

KASAI, M ;

KOZONO, Y .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1990-1992

[6] EFFECTS OF DOUBLE EXCHANGE IN MAGNETIC CRYSTALS [J].

DEGENNES, PG .

PHYSICAL REVIEW, 1960, 118 (01) :141-154

[7] LATTICE EFFECTS ON THE MAGNETORESISTANCE IN DOPED LAMNO3 [J].

HWANG, HY ;

CHEONG, SW ;

RADAELLI, PG ;

MAREZIO, M ;

BATLOGG, B .

PHYSICAL REVIEW LETTERS, 1995, 75 (05) :914-917

[8] A FIRST-ORDER PHASE-TRANSITION INDUCED BY A MAGNETIC-FIELD [J].

KUWAHARA, H ;

TOMIOKA, Y ;

ASAMITSU, A ;

MORITOMO, Y ;

TOKURA, Y .

SCIENCE, 1995, 270 (5238) :961-963

[9] Giant magnetoresistance in magnetic layered and granular materials [J].

Levy, PM .

SOLID STATE PHYSICS - ADVANCES IN RESEARCH AND APPLICATIONS, VOL 47, 1994, 47 :367-462

[10] Ferromagnetic resonance and magnetic homogeneity in a giant-magnetoresistance material La2/3Ba1/3MnO3 [J].

Lofland, SE ;

Bhagat, SM ;

Ju, HL ;

Xiong, GC ;

Venkatesan, T ;

Greene, RL .

PHYSICAL REVIEW B, 1995, 52 (21) :15058-15061

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