D-band Raman intensity of graphitic materials as a function of laser energy and crystallite size

被引：215

作者：

Sato, K. ^{[1
]}

Saito, R.

Oyama, Y.

Jiang, J.

Cancado, L. G.

Pimenta, M. A.

Jorio, A.

Samsonidze, Ge. G.

Dresselhaus, G.

Dresselhaus, M. S.

机构：

[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

[2] CREST, Sendai, Miyagi 9808578, Japan

[3] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

[4] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[5] MIT, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA

[6] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

CHEMICAL PHYSICS LETTERS | 2006年 / 427卷 / 1-3期

基金：

日本科学技术振兴机构; 美国国家科学基金会;

关键词：

D O I：

10.1016/j.cplett.2006.05.107

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Raman intensity of the disorder-induced D-band in graphitic materials is calculated as a function of the in-plane size of the graphite nanoparticles (L-a) and as a function of the excitation laser energy. Matrix elements associated with the double resonance Raman processes, i.e., electron-photon, electron-phonon and electron-defect processes are calculated based on the tight binding method. The electron-defect interaction is calculated by considering the elastic scattering at the armchair edge of graphite, adopting a nanographite flake whose width is L-a. We compare the calculated results with the experimental results obtained from the spectra for different laser lines and L-a. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：117 / 121

页数：5

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