Straight and helical InGaN core-shell nanowires with a high In core content

被引：43

作者：

Cai, X. M. ^{[1
]}

Leung, Y. H.

Cheung, K. Y.

Tam, K. H.

Djurisic, A. B.

Xie, M. H.

Chen, H. Y.

Gwo, S.

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Ctr Mat Sci, Hsinchu 300, Taiwan

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 09期

关键词：

D O I：

10.1088/0957-4484/17/9/042

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In1-xGaxN nanowires were fabricated in a tube furnace by chemical vapour deposition, with Ga, In and NH3 as the starting materials and Au as the catalyst. Scanning electron microscopy showed that a mixture of straight and helical In1-xGaxN nanowires was obtained. Transmission electron microscopy (TEM) revealed that both types of nanowire exhibited core-shell structures. The crystal structure of the samples was studied by high resolution TEM and x-ray diffraction, and both cubic and hexagonal phases were found. Energy dispersive x-ray spectroscopy showed that the core had a high In content and the shell had a low In content. The nanowires were also characterized by photoluminescence. The mechanism of formation for the helical nanowires and core-shell structure is discussed.

引用

页码：2330 / 2333

页数：4

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