Alkaline-doped manganese perovskite thin films grown by MOCVD

被引：21

作者：

Bibes, M

Gorbenko, O

Martínez, B

Kaul, A

Fontcuberta, J

机构：

[1] CSIC, Inst Ciencia Mat Barcelona, E-08193 Barcelona, Catalunya, Spain

[2] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2000年 / 211卷 / 1-3期

关键词：

manganese perovskites; alkaline doping; magnetoresistance anisotropy;

D O I：

10.1016/S0304-8853(99)00712-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the preparation and characterization of La1-xNaxMnO3 thin films grown by MOCVD on various single-crystalline substrates. Under appropriate conditions epitaxial thin films have been obtained. The Curie temperatures of the films, which are very similar to those of bulk samples of similar composition, reflect the residual strain caused by the substrate. The anisotropic magnetoresistance AMR of the films has been analyzed in some detail, and it has been found that it has a two-fold symmetry at any temperature. Its temperature dependence mimics that of the electrical resistivity and magnetoresistance measured at similar fields, thus suggesting that the real structure of the material contributes to the measured AMR besides the intrinsic component. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：47 / 53

页数：7

共 20 条

[1] High-field magnetoresistance at interfaces in manganese perovskites [J].