Photoelectron escape depth and inelastic secondaries in high-temperature superconductors

被引:20
作者
Norman, MR
Randeria, M
Ding, H
Campuzano, JC
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
[2] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
[3] Univ Illinois, Dept Phys, Chicago, IL 60607 USA
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 17期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.59.11191
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the photoelectron escape depth in the high-temperature superconductor Bi2212 by use of electron energy-loss spectroscopy data. We find that the escape depth is only 3 Angstrom for photon energies typically used in angle-resolved photoemission measurements. We then use this to estimate the number of inelastic secondaries, and find this to be quite small near the Fermi energy. This implies that the large background seen near the Fermi energy in photoemission measurements is of some other origin. [S0163-1829(99)08017-0].
引用
收藏
页码:11191 / 11192
页数:2
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