Advances in chemical-mechanical planarization

被引:93
作者
Singh, RK [1 ]
Bajaj, R
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Appl Mat Inc, Technol, Santa Clara, CA USA
关键词
chemical-mechanical planarization; chemical-mechanical polishing; CMP; copper interconnects; low-kappa dielectrics; nanotopography; shallow trench isolation; silica polishing; slurry design;
D O I
10.1557/mrs2002.244
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical-mechanical planzarization (CMP), also known as chemical-mechanical polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer-pad-slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow tren h isolation, and emerging applications.
引用
收藏
页码:743 / 751
页数:9
相关论文
共 19 条
[1]  
Bielmann M, 2000, MATER RES SOC SYMP P, V566, P97
[2]  
BRAUN AE, 2001, SEMICOND INT, V24, P51
[3]  
BROWN NJ, 1981, P SOC PHOTO-OPT INST, V306, P42
[4]   CHEMICAL PROCESSES IN GLASS POLISHING [J].
COOK, LM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 120 (1-3) :152-171
[5]  
Corbett M, 2000, SOLID STATE TECHNOL, V43, P38
[6]   CHEMICAL-MECHANICAL POLISHING FOR FABRICATING PATTERNED W METAL FEATURES AS CHIP INTERCONNECTS [J].
KAUFMAN, FB ;
THOMPSON, DB ;
BROADIE, RE ;
JASO, MA ;
GUTHRIE, WL ;
PEARSON, DJ ;
SMALL, MB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (11) :3460-3465
[7]  
KELEHER J, 2002, 7 INT CHEM MECH PLAN, P188
[8]   Abrasive-free polishing for copper damascene interconnection [J].
Kondo, S ;
Sakuma, N ;
Homma, Y ;
Goto, Y ;
Ohashi, N ;
Yamaguchi, H ;
Owada, N .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (10) :3907-3913
[9]  
LEE SM, 2002, S 1 MAT RES SOC M SA
[10]  
LEE TH, 2002, SCI AM, V52, P286