Thermal conductivity of diamond-based silicon-on-insulator structures

Diamond films of various thickness (1-300 mu m) were deposited on single-crystal Si active (300 mu m) by a microwave plasma chemical vapor deposition method using gaseous mixtures of methane and hydrogen. After thinning of the Si layer by machine and ion-beam polishing a diamond-based silicon-on-insulator structure with final Si layer thickness of about 1 mu m is formed. Thermal conductivity of this structure material with various thicknesses of diamond and Si layer was measured. Compared with bulk silicon, the thermal conductivity of the silicon-on-diamond structure with 300 mu m diamond and 1 mu m silicon increases by 850%.