Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures

被引：15

作者：

Du, AY ^{[1
]}

Li, MF ^{[1
]}

Chong, TC ^{[1
]}

Teo, KL ^{[1
]}

Lau, WS ^{[1
]}

Zhang, Z ^{[1
]}

机构：

[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期

关键词：

D O I：

10.1063/1.117339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dislocations and traps in p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by cross-section transmission electron microscopy (XTEM) and deep level transient spectroscopy (DLTS). The misfit dislocations and threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thicknesses over all satisfy the Dodson-Tsao plastic flow critical layer thickness curve. By comparing the XTEM and DLTS results, we identify that the threading dislocations in bulk layers introduce three hole trap levels I-Il, H2, and H5 with DLTS activation energies of 0.32, 0.40, and 0.88 eV, respectively, and one electron trap level Fl with a DLTS activation energy of 0.54 eV. The misfit dislocations in the relaxed InGaAs/GaAs interface induce a hole trap level H4 with a DLTS activation energy of 0.67-0.73 eV. (C) 1996 American Institute of Physics.

引用

页码：2849 / 2851

页数：3

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