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Hydrogen-related burn-in in GaAs/AlGaAs HBTs and implications for reliability
被引：18
作者：
Henderson, T
Ley, V
Kim, T
Moise, T
Hill, D
机构：
来源：
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996
|
1996年
关键词：
D O I：
10.1109/IEDM.1996.553568
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
We report a burn-in effect in carbon-doped GaAs/AlGaAs HBTs that results in an increase in dc current gain. The burn-in is the result of the annihilation of hydrogen-related recombination centers due to electron injection into the base. This burn-in effect needs to be taken into account in long-term bias stress testing of HBTs. Unrealistic values of mean time to failure and activation energy may be calculated otherwise.
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页码：203 / 206
页数：4
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