Orientation dependence of homoepitaxy: An in situ X-ray scattering study of Ag

被引：27

作者：

Elliott, WC ^{[1
]}

Miceli, PF ^{[1
]}

Tse, T ^{[1
]}

Stephens, PW ^{[1
]}

机构：

[1] SUNY STONY BROOK,DEPT PHYS,STONY BROOK,NY 11794

来源：

PHYSICA B | 1996年 / 221卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0921-4526(95)00906-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated the homoepitaxial growth of Ag(111) and Ag(100) using X-ray specular reflectivity measured near the Bragg positions. At a growth temperature of 200 K, we observe that the root-mean-square roughness, a, evolves as a power law in the deposited thickness for both crystal orientations. However, the growth kinetics of these surfaces are vastly different, leading to exponents of beta = 0.5 +/- 0.05 for Ag(111) and beta = 0.28 +/- 0.03 for Ag(100). The differences in growth are attributed to the diffusion barrier at step ledges.

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页码：65 / 69

页数：5

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