Molecular dynamics study of the lattice thermal conductivity of Kr/Ar superlattice nanowires

被引:91
作者
Chen, YF [1 ]
Li, DY
Yang, JK
Wu, YH
Lukes, JR
Majumdar, A
机构
[1] Southeast Univ, Dept Mech Engn, Nanjing 210096, Peoples R China
[2] Southeast Univ, MEMS, China Educ Council Key Lab, Nanjing 210096, Peoples R China
[3] Univ Penn, Dept Mech Engn & Appl Mech, Philadelphia, PA 19104 USA
[4] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
基金
中国国家自然科学基金;
关键词
superlattice nanowire; molecular dynamics simulation; thermal conductivity; interface scattering effect;
D O I
10.1016/j.physb.2004.03.247
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The nonequilibrium molecular dynamics (NEMD) method has been used to calculate the lattice thermal conductivities of Ar and Kr/Ar nanostructures in order to study the effects of interface scattering, boundary scattering, and elastic strain on lattice thermal conductivity. Results show that interface scattering poses significant resistance to phonon transport in superlattices and superlattice nanowires. The thermal conductivity of the Kr/Ar superlattice nanowire is only about 1/3 of that for pure Ar nanowires with the same cross-sectional area and total length due to the additional interfacial thermal resistance. It is found that nanowire boundary scattering provides significant resistance to phonon transport. As the cross-sectional area increases, the nanowire boundary scattering decreases, which leads to increased nanowire thermal conductivity. The ratio of the interfacial thermal resistance to the total effective thermal resistance increases from 30% for the superlattice nanowire to 42% for the superlattice film. Period length is another important factor affecting the effective thermal conductivity of the nanostructures. Increasing the period length will lead to increased acoustic mismatch between the adjacent layers, and hence increased interfacial thermal resistance. However, if the total length of the superlattice nanowire is fixed, reducing the period length will lead to decreased effective thermal conductivity due to the increased number of interfaces. Finally, it is found that the interfacial thermal resistance decreases as the reference temperature increases, which might be due to the inelastic interface scattering. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:270 / 280
页数:11
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