Ordering and shape of self-assembled InAs quantum dots on GaAs(001)

被引：34

作者：

Zhang, K

Heyn, C

Hansen, W

Schmidt, T

Falta, J

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

[2] DESY, HASYLAB, D-22603 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期

关键词：

D O I：

10.1063/1.126305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantitative grazing-incidence small-angle x-ray scattering experiments have been performed on self-assembled InAs quantum dots (QDs) grown by molecular-beam epitaxy. We find pronounced nonspecular diffuse scattering satellite peaks with high diffraction orders, indicating a lateral ordering in the spatial positions of the InAs QDs. The mean-dot-dot distance and correlation lengths of the dot lateral distribution are found to be anisotropic. We observe the sharpest dot distribution in the [110] direction. Additional broad diffraction peaks are observed and associated with dot facet crystal truncation rods of the {111} and {101} facet families. This suggests an octagonal-based dot shape. (C) 2000 American Institute of Physics. [S0003-6951(00)02716-9].

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页码：2229 / 2231

页数：3

相关论文

共 22 条

[1] INITIAL-STAGES OF INAS EPITAXY ON VICINAL GAAS(001)-(2X4) [J].

BRESSLERHILL, V ;

LORKE, A ;

VARMA, S ;

PETROFF, PM ;

POND, K ;

WEINBERG, WH .

PHYSICAL REVIEW B, 1994, 50 (12) :8479-8487

[2] ISLAND SCALING IN STRAINED HETEROEPITAXY - INAS/GAAS(001) [J].

BRESSLERHILL, V ;

VARMA, S ;

LORKE, A ;

NOSHO, BZ ;

PETROFF, PM ;

WEINBERG, WH .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3209-3212

[3] Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots [J].

Chu, L ;

Arzberger, M ;

Böhm, G ;

Abstreiter, G .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) :2355-2362

[4] Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction [J].

Darhuber, AA ;

Holy, V ;

Stangl, J ;

Bauer, G ;

Krost, A ;

Heinrichsdorff, F ;

Grundmann, M ;

Bimberg, D ;

Ustinov, VM ;

Kopev, PS ;

Kosogov, AO ;

Werner, P .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :955-957

[5] INAS/GAAS QUANTUM DOTS - RADIATIVE RECOMBINATION FROM ZERO-DIMENSIONAL STATES [J].

GRUNDMANN, M ;

LEDENTSOV, NN ;

HEITZ, R ;

ECKEY, L ;

CHRISTEN, J ;

BOHRER, J ;

BIMBERG, D ;

RUVIMOV, SS ;

WERNER, P ;

RICHTER, U ;

HEYDENREICH, J ;

USTINOV, VM ;

EGOROV, AY ;

ZHUKOV, AE ;

KOPEV, PS ;

ALFEROV, ZI .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 188 (01) :249-258

[6] THE SPECTROSCOPY OF QUANTUM-DOT ARRAYS [J].

HEITMANN, D ;

KOTTHAUS, JP .

PHYSICS TODAY, 1993, 46 (06) :56-63

[7] Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying [J].

Joyce, PB ;

Krzyzewski, TJ ;

Bell, GR ;

Joyce, BA ;

Jones, TS .

PHYSICAL REVIEW B, 1998, 58 (24) :15981-15984

[8] In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001) [J].

Kobayashi, NP ;

Ramachandran, TR ;

Chen, P ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3299-3301

[9] Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction [J].

Lee, H ;

Lowe-Webb, R ;

Yang, WD ;

Sercel, PC .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :812-814

[10] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692