Proton degradation of light-emitting diodes

被引：47

作者：

Johnston, AH ^{[1
]}

Rax, BG ^{[1
]}

Selva, LE ^{[1
]}

Barnes, CE ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 06期

关键词：

D O I：

10.1109/23.819154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton degradation is investigated for several types of light-emitting diodes with wavelengths in the near infrared region. Several basic light-emitting diode (LED) technologies are compared, including homojunction and double-heterojunction devices. Homojunction LEDs fabricated with amphoteric dopants are far more sensitive to displacement damage than double-heterojunction LEDs, and are strongly affected by injection-enhanced annealing. Unit-to-unit variability remains an important issue for all LED technologies. For some technologies, degradation of the forward voltage characteristics appears to be more significant than degradation of light output.

引用

页码：1781 / 1789

页数：9

共 15 条

[1] COMPARISON OF GAMMA-IRRADIATION-INDUCED DEGRADATION IN AMPHOTERICALLY SI-DOPED GAAS LEDS AND ZN-DIFFUSED GAAS LEDS [J].