Formation of hydrogen molecules in n-type silicon

We have investigated hydrogen molecules (H-2) formed in heavily doped n-type silicon by remote hydrogen atom treatment. We measure the Raman lines of H-2 as a function of the substrate temperature during hydrogen atom treatment. A broad vibrational Raman line of H-2 can be clearly observed at around 4158 cm(-1) for substrate temperatures between 250 and 500 degrees C, indicating, that hydrogen exists in molecular form in crystalline silicon. The vibrational Raman Line of H-2 has a maximum intensity for a substrate temperature of 400 degrees C. An isotope shift is also detected at around 2990 cm(-1) in silicon treated with deuterium atoms at 400 degrees C.