Fabrication of suspended piezoelectric microresonators

被引:15
作者
Piekarski, B [1 ]
Dubey, M
Devoe, D
Zakar, E
Zeto, R
Conrad, J
Piekarz, R
Ervin, M
机构
[1] USA, Res Lab, Adelphi, MD 20783 USA
[2] Univ Maryland, Dept Mech Engn, College Pk, MD 20742 USA
[3] Univ Maryland, Syst Res Inst, College Pk, MD 20742 USA
关键词
PZT; piezoelectric resonators; MEMS resonators;
D O I
10.1080/10584589908215587
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new process for realizing piezoelectric microdevices has been developed. Suspended piezoelectric clamped-clamped beam resonators have been fabricated using sol-gel deposited lead zirconate titanate (PZT) films as the piezoelectric material, platinum (Pt) as the top and bottom electrode, and silicon dioxide for the supporting beam structure. A five-mask process was used to fabricate the suspended resonators. The process flow included sol-gel PZT deposition, Pt sputter deposition, Pt and PZT argon ion milling, PZT wet and reactive ion etching (RTE), silicon deep reactive ion etching (DRIE), and oxide RIE. Both single- and triplebeam resonators were fabricated with beam widths of 15, 20, and 30 mu m and lengths of 200 and 400 mu m. Testing of the resonators produced resonant frequencies between 100 kHz and 1.2 MHz, depending on beam geometry.
引用
收藏
页码:147 / 154
页数:8
相关论文
共 13 条
[1]  
DeVoe, 1997, THESIS U CALIFORNIA
[2]  
DUBOIS MA, 1998, T ULTRASONICS FERROE
[3]  
LEE C, 1996, T ULTRASONICS FERROE, V43
[4]  
LEE R, 1979, J VAC SCI TECHNOL, V16
[5]  
LIN L, 1998, J MICROELECTROMECHAN, V7
[6]  
LUGINBUHL P, 1996, SENSORS ACTUATORS, V54
[7]  
MURALT P, 1996, SENSORS ACTUATORS, V53
[8]  
NGUYEN CT, 1998, P 1998 IEEE MICR EL
[9]  
PAN W, 1994, J MAT RES, V9
[10]  
TROLIERMCKINSTR.S, 1998, DABT6395C0053