Performance of a C60+ ion source on a dynamic SIMS instrument

被引:15
作者
Fahey, Albert J. [1 ]
Gillen, Greg [1 ]
Chi, Peter [1 ]
Mahoney, Christine M. [1 ]
机构
[1] Natl Inst Stand & Technol, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA
关键词
buckminsterfullerene; ion source; SIMS ion source; cluster ion beams;
D O I
10.1016/j.apsusc.2006.02.263
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An IonOptika(1) C-60(+) ion source has been fitted onto a CAMECA(1) ims-4f. Stable ion beams of C-60(+) and C-60(2+) have been obtained with typical currents approaching 20 nA under conditions that allow for several days of source operation. The beam has been able to be focussed into a spot size of similar to 3 mu m with an anode voltage of 10 keV and scanning ion images have been acquired. We have performed analyses to characterize the performance of C-60(+) and C-60(2+). Depth profiles of a Cr-Ni multi-layer and polymer films with C-60(+) have produced excellent results. We have discovered that, under bombardment energies of < 12 keVon Si, C-60(+) Will sputter material from the sample but will also produce deposition at a rate that exceeds the sputter rate. The performance of the source and our experiences with its operation will be discussed and some characteristic analysis data will be shown. (c) 2006 Published by Elsevier B.V.
引用
收藏
页码:7312 / 7314
页数:3
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