Integration of Cu/SiOC in dual damascene interconnect for 0.1μm technology using a new SiC material as dielectric barrier

被引：17

作者：

Fayolle, M ^{[1
]}

Torres, J ^{[1
]}

Passemard, G ^{[1
]}

Fusalba, F ^{[1
]}

Fanget, G ^{[1
]}

Louis, D ^{[1
]}

Arnaud, L ^{[1
]}

Girault, V ^{[1
]}

Cluzel, J ^{[1
]}

Feldis, H ^{[1
]}

Rivoire, M ^{[1
]}

Louveau, O ^{[1
]}

Mourier, T ^{[1
]}

Broussous, L ^{[1
]}

机构：

[1] CEA Grenoble, LETI, F-38054 Grenoble 9, France

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014880

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work was focused on the integration of Cu/SiOC dual damascene interconnect modules for 0.1mum node technology. A complete study was performed on the impact of the dielectric barrier material on the integration approach. It was shown that a Nitrogen free SiC barrier layer was necessary to integrate SiOC in the currently used via first dual damascene architecture. The performance of this new material was evaluated in terms of etching selectivity, resist poisoning and ARC lithography behaviour, electrical and reliability results. On all these aspects, SiC was found better than SiCN.

引用

页码：39 / 41

页数：3

共 3 条

[1]

BERGER T, 2001, IN PRESS MAT RES SOC

[2]

FAYOLLE M, 2001, IN PRESS AMC 2001

[3] A high performance 0.13 μm copper BEOL technology with low-k dielectric [J].

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Chen, ZG ;

Cohen, S ;

Connolly, JB ;

Cowley, A ;

Dalton, T ;

Das, SK ;

Davis, CR ;

Deutsch, A ;

De Wan, C ;

Edelstein, DC ;

Emmi, PA ;

Faltermeier, CG ;

Fitzsimmons, JA ;

Hedrick, J ;

Heidenreich, JE ;

Hu, CK ;

Hummel, JP ;

Jones, P ;

Kaltalioglu, E ;

Kastenmeier, BE ;

Krishnan, M ;

Landers, WF ;

Liniger, E ;

Liu, J ;

Lustig, NE ;

Malhotra, S ;

Manger, DK ;

McGahay, V ;

Mih, R ;

Nye, HA ;

Purushothaman, S ;

Rathore, HA ;

Seo, SC ;

Shaw, TM ;

Simon, AH ;

Spooner, TA ;

Stetter, M ;

Wachnik, RA ;

Ryan, JG .

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2000, :261-263

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