Room-temperature operation of InP-based InAs quantum dot laser

被引：60

作者：

Kim, JS ^{[1
]}

Lee, JH ^{[1
]}

Hong, SU ^{[1
]}

Han, WS ^{[1
]}

Kwack, HS ^{[1
]}

Lee, CW ^{[1
]}

Oh, DK ^{[1
]}

机构：

[1] ETRI, Basic Res Labs, Taejon 305350, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 07期

关键词：

characteristic temperature; InAs; InP (001); quantum dot (QD); room-temperature lasing;

D O I：

10.1109/LPT.2004.828494

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ridge waveguide quantum dot (QD) laser with a stripe width of 15 mum was fabricated by using the seven-stacked InAs QD layers based on the InAlGaAs-InAlAs material system on InP (001) substrate. Room-temperature lasing operation was observed at 1.501 mum, which is the first observation from the InAs QDs with the InAlGaAS-InAlAs structure. The characteristic temperature of the InAs QD laser calculated from the temperature dependence of threshold current density was 135 K in the temperature range from 200 K to room temperature.

引用

收藏

页码：1607 / 1609

页数：3

相关论文

共 16 条

[1] InAs self-assembled quantum-dot lasers grown on (100) InP [J].

Allen, CN ;

Poole, PJ ;

Marshall, P ;

Fraser, J ;

Raymond, S ;

Fafard, S .

APPLIED PHYSICS LETTERS, 2002, 80 (19) :3629-3631

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[3] Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001) [J].

Brault, J ;

Gendry, M ;

Grenet, G ;

Hollinger, G ;

Olivares, J ;

Salem, B ;

Benyattou, T ;

Bremond, G .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) :506-510

[4] Formation of self-assembled InAs quantum dots on InAl(Ga)As/InP and effects of a thin GaAs layer [J].

Kim, JS ;

Lee, JH ;

Hong, SU ;

Han, WS ;

Kwack, HS ;

Lee, CW ;

Oh, DK .

JOURNAL OF CRYSTAL GROWTH, 2003, 259 (03) :252-256

[5] Height-controlled InAs quantum dots by using a thin InGaAs layer [J].

Kim, JS ;

Yu, PW ;

Lee, JI ;

Kim, JS ;

Kim, SG ;

Leem, JY ;

Jeon, M .

APPLIED PHYSICS LETTERS, 2002, 80 (25) :4714-4716

[6]

KIM JS, UNPUB APPL PHYS LETT

[7] InAs/GaInAs quantum dot DFB lasers emitting at 1.3μm [J].

Klopf, F ;

Krebs, R ;

Wolf, A ;

Emmerling, M ;

Reithmaier, JP ;

Forchel, A .

ELECTRONICS LETTERS, 2001, 37 (10) :634-636

[8] Growth and optical characterizations of InAs quantum dots on InP substrate:: towards a 1.55 μm quantum dot laser [J].

Paranthoen, C ;

Platz, C ;

Moreau, G ;

Bertru, N ;

Dehaese, O ;

Le Corre, A ;

Miska, P ;

Even, J ;

Folliot, H ;

Labbé, C ;

Patriarche, G ;

Simon, JC ;

Loualiche, S .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :230-235

[9] Chirp consequences of all-optical RZ to NRZ conversion using cross-phase modulation in an active semiconductor photonic integrated circuit [J].

Park, SG ;

Spiekman, LH ;

Eiselt, M ;

Wiesenfeld, JM .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (03) :233-235

[10] Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate [J].

Qiu, YM ;

Uhl, D ;

Chacon, R ;

Yang, RQ .

APPLIED PHYSICS LETTERS, 2003, 83 (09) :1704-1706