Critical current properties in YBCO coated IBAD tapes

被引:8
作者
Inoue, M
Nishimura, S
Kuga, T
Kiuchi, M
Kiss, T
Takeo, M
Matsushita, T
Iijima, Y
Kakimoto, K
Saitoh, T
Awaji, S
Watanabe, K
Shiohara, Y
机构
[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect & Elect Syst Engn, Higashi Ku, Fukuoka 8128581, Japan
[2] Kyushu Inst Technol, Dept Comp Sci & Elect, Iizuka, Fukuoka 8208502, Japan
[3] Fujikura Ltd, Mat Technol Lab, Koto Ku, Tokyo 1358512, Japan
[4] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[5] ISTEC, Superconduct Res Lab, Tokyo 1350062, Japan
来源
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2002年 / 372卷
关键词
critical current; YBCO coated tape; ion beam assisted deposition; characteristics;
D O I
10.1016/S0921-4534(02)00909-7
中图分类号
O59 [应用物理学];
学科分类号
摘要
Current transport properties in YBCO coated ion beam assisted deposition tapes have been studied as a function of temperature. magnetic field and field angle under high magnetic fields up to IS T. The value of critical Current. 1, for I cm wide tape was 85 A at 77.3 K in self-field. Detailed properties of critical Current density. J(e), were Studied using 100 mum wide and 1 mm long bridge patterned in the tape. The results were compared with the properties of epitaxial YBCO thin films deposited on SrTiO3 single crystalline substrate. The value of critical current density. J(e), was maintained higher than 10(5) A/cm(2) at 70 K in 5 T perpendicular to the tape surface. The value of approximate to 1/4 of J(e), value in epitaxial thin film. In higher magnetic field, the difference becomes smaller. Power E J relationship as observed over wide range of temperature and magnetic field. The power index n were superior to those of epitaxial thin films And. the so-called glass-liquid transition field, B-GL, of the coated tape was also superior to that of epitaxial thin films Angle dependences of J, showed a broad peak around 90degrees (parallel toc), in addition to a sharp peak at 0degrees (perpendicular toc) These results suggest that correlated defects along e-axis direction contribute as pinning sites. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:794 / 797
页数:4
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