Growth of Ca2Si layers on Mg2Si/Si(111) substrates

被引：37

作者：

Matsui, H ^{[1
]}

Kuramoto, M ^{[1
]}

Ono, T ^{[1
]}

Nose, Y ^{[1
]}

Tatsuoka, H ^{[1
]}

Kuwabara, H ^{[1
]}

机构：

[1] Shizuoka Univ, Fac Engn, Hamamatsu, Shizuoka 4328561, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

diffusion; interfaces; surface processes; semiconducting silicon compounds;

D O I：

10.1016/S0022-0248(01)02276-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single phase Ca2Si layers are successfully grown on Mg2Si/Si substrates for the first time. These Mg2Si and Ca2Si layers are formed by heat treatment of Si and Mg2Si/Si substrates in Mg and Ca vapor, respectively. The replacement of Ca atoms with Mg in Mg2Si leads to the formation of single phase Ca,Si layers. it is confirmed that the formation of other silicide phases is suppressed, when the layers are grown under optimum growth time. The structural property of the resultant layers is examined by X-ray diffraction technique, scanning electron microscopy and transmission electron microscopy. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：2121 / 2124

页数：4

共 17 条

[1] CHEMICAL-BOND AND ELECTRONIC STATES IN CALCIUM SILICIDES - THEORY AND COMPARISON WITH SYNCHROTRON-RADIATION PHOTOEMISSION [J].

BISI, O ;

BRAICOVICH, L ;

CARBONE, C ;

LINDAU, I ;

IANDELLI, A ;

OLCESE, GL ;

PALENZONA, A .

PHYSICAL REVIEW B, 1989, 40 (15) :10194-10209

[2] OPTICAL-PROPERTIES OF SEMICONDUCTING IRON DISILICIDE THIN-FILMS [J].

BOST, MC ;

MAHAN, JE .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) :2696-2703

[3] SILICON VALENCE STATES IN CALCIUM SILICIDES - A SI L2,3VV AUGER LINE-SHAPE ANALYSIS [J].

CALLIARI, L ;

MARCHETTI, F ;

SANCROTTI, M ;

BISI, O ;

IANDELLI, A ;

OLCESE, GL ;

PALENZONA, A .

PHYSICAL REVIEW B, 1990, 41 (11) :7569-7575

[4]

CHEMELLI C, 1989, PHYS REV B, V40, P10211

[5]

Kubaschewski O., 1979, INT SERIES MAT SCI T, V24, p[276, 280, 310]

[6] THE THERMAL CONDUCTIVITIES OF MG2SI AND MG2GE [J].

LABOTZ, RJ ;

MASON, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (02) :121-126

[7]

Lange H, 1997, PHYS STATUS SOLIDI B, V201, P3, DOI 10.1002/1521-3951(199705)201:1<3::AID-PSSB3>3.0.CO

[8]

2-W

[9] Semiconducting Mg2Si thin films prepared by molecular-beam epitaxy [J].

Mahan, JE ;

Vantomme, A ;

Langouche, G ;

Becker, JP .

PHYSICAL REVIEW B, 1996, 54 (23) :16965-16971

[10] GOLD-ALUMINUM THIN-FILM INTERACTIONS AND COMPOUND FORMATION [J].

MAJNI, G ;

NOBILI, C ;

OTTAVIANI, G ;

COSTATO, M ;

GALLI, E .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4047-4054

← 1 2 →