Improvements in mode-locked semiconductor diode lasers using monolithically integrated passive waveguides made by quantum-well intermixing

被引：32

作者：

Camacho, F

Avrutin, EA

Cusumano, P

Helmy, AS

Bryce, AC

Marsh, JH

机构：

[1] Dept. of Electronics and Elec. Eng., University of Glasgow

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 09期

关键词：

integrated optics; mode-locked lasers; pulse generation; quantum-well lasers; semiconductor lasers;

D O I：

10.1109/68.618479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By using the technique of quantum-well intermixing (QWI), monolithically integrated passive, and active waveguides can be fabricated. It is shown that mode-locked extended cavity semiconductor lasers with integrated low-loss passive waveguides display superior performance to devices in which the entire waveguide is active: the threshold current is a factor of 3-5 lower, the pulsewidth is reduced from 10.2 ps in the all active laser to 3.5 ps in the extended cavity device and there is a decrease in the free-running jitter level from 15 to 6 ps (10 kHz-10 MHz).

引用

收藏

页码：1208 / 1210

页数：3

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