A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser

被引：95

作者：

Song, YK

Zhou, H

Diagne, M

Nurmikko, AV ^{[1
]}

Schneider, RP

Kuo, CP

Krames, MR

Kern, RS

Carter-Coman, C

Kish, FA

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] Brown Univ, Dept Phys, Providence, RI 02912 USA

[3] Agilent Labs, Palo Alto, CA 94303 USA

[4] Agilent Technol Optoelect Div, San Jose, CA 95131 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 13期

关键词：

D O I：

10.1063/1.126128

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated and studied a violet (lambda = 403 nm) vertical cavity surface emitting laser structure, composed of an InGaN multiple quantum well active medium and a pair of high reflectivity dielectric mirrors. Lasing under high repetition rate (76 MHz) pulsed optical pumping has been achieved at temperatures up to T = 258 K at average pump power of approximately 30 mW. (C) 2000 American Institute of Physics. [S0003-6951(00)02813-8].

引用

页码：1662 / 1664

页数：3

共 18 条

[1]

Akasaki I, 1998, SEMICONDUCT SEMIMET, V50, P459

[2]

Ambacher O, 1997, MRS INTERNET J N S R, V2, pU3

[3] ROOM-TEMPERATURE OPTICALLY PUMPED BLUE-GREEN VERTICAL-CAVITY SURFACE-EMITTING LASER [J].

JEON, H ;

KOZLOV, V ;

KELKAR, P ;

NURMIKKO, AV ;

CHU, CC ;

GRILLO, DC ;

HAN, J ;

HUA, GC ;

GUNSHOR, RL .

APPLIED PHYSICS LETTERS, 1995, 67 (12) :1668-1670

[4] Stimulated emission, gain, and coherent oscillations in II-VI semiconductor microcavities [J].

Kelkar, PV ;

Kozlov, VG ;

Nurmikko, AV ;

Chu, CC ;

Han, J ;

Gunshor, RL .

PHYSICAL REVIEW B, 1997, 56 (12) :7564-7573

[5]

Kelly MK, 1997, PHYS STATUS SOLIDI A, V159, pR3, DOI 10.1002/1521-396X(199701)159:1<R3::AID-PSSA99993>3.0.CO

[6]

2-F

[7]

KNEISSL MA, 1999, INT C LUM OS JAP SEP

[8] Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser [J].

Krestnikov, IL ;

Lundin, WV ;

Sakharov, AV ;

Semenov, VA ;

Usikov, AS ;

Tsatsul'nikov, AF ;

Alferov, ZI ;

Ledentsov, NN ;

Hoffmann, A ;

Bimberg, D .

APPLIED PHYSICS LETTERS, 1999, 75 (09) :1192-1194

[9] High-reflectivity GaN GaAlN Bragg mirrors at blue green wavelengths grown by molecular beam epitaxy [J].

Langer, R ;

Barski, A ;

Simon, J ;

Pelekanos, NT ;

Konovalov, O ;

André, R ;

Dang, LS .

APPLIED PHYSICS LETTERS, 1999, 74 (24) :3610-3612

[10] InGaN-based violet laser diodes [J].

Nakamura, S .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (06) :R27-R40

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