Digital lithography for large-area electronics on flexible substrates

被引：20

作者：

Wong, William S. ^{[1
]}

Lujan, Rene ^{[1
]}

Daniel, Jurgen H. ^{[1
]}

Limb, Scott ^{[1
]}

机构：

[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

silicon; thin film transistors; processing;

D O I：

10.1016/j.jnoncrysol.2005.12.055

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated at growth temperatures no greater than 150 degrees C. The transistor device performance was comparable to conventional high-temperature processed devices. Typical field-effect mobility for these low-temperature devices were similar to 1 cm(2)/V s, on-off ratios of > 10(8) and sub-threshold slopes of 0.5 V/decade were measured. The low-temperature process allowed the integration of the TFTs with flexible polymeric substrates. Device fabrication for these devices was performed using jet-printed etch masks in place of photolithography. The devices fabricated on the flexible substrates using jet printing were comparable to devices fabricated on glass. (c) 2006 Published by Elsevier B.V.

引用

页码：1981 / 1985

页数：5

共 25 条

[1] Dual-color polymer light-emitting pixels processed by hybrid inkjet printing [J].