Magnetoresistance of ferromagnetic tunnel junctions in the double-exchange model

被引:54
作者
Itoh, H [1 ]
Ohsawa, T
Inoue, J
机构
[1] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan
关键词
D O I
10.1103/PhysRevLett.84.2501
中图分类号
O4 [物理学];
学科分类号
0702 [物理学];
摘要
We conduct a theoretical study of the temperature dependence of the spin polarization (P) and the magnetoresistance (MR) ratio using the double exchange (DE) model for ferromagnetic tunnel junctions with half-metallic systems. It is shown that the strong exchange coupling in the DE model plays an important role in the temperature dependence of both P and the MR ratio; their values can be less than the maximum values expected for half-metallic systems at low temperatures, and the MR ratio decreases more rapidly than P with increasing temperature. The calculated results, however, indicate that the MR ratio may still be large at high temperatures near the Curie temperature.
引用
收藏
页码:2501 / 2504
页数:4
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