The dielectric and electrical properties of four layered LaBi4FeTi3O15

A four layered compound LaBi4FeTi3O15 has been synthesised by the ceramic route. Polycrystalline samples were prepared by uniaxial pressing and cold isostatic pressing with a view to study the effect of different compaction techniques on the physical properties of the compound. The lattice parameters were evaluated and the compound was found to have an orthorhombic symmetry. A.C. impedance techniques have been used to characterise the material. The impedance response, the bulk dielectric constant and the ferroelectric transition temperatures are presented. The transitions observed in both cases were of a diffusive type. The dielectric data is interpreted vis-a-vis the crystal chemistry of analogous bismuth layer-structured ferroelectrics.