Multilayer buffer for high-temperature superconductor devices on MgO

被引：36

作者：

Faley, M. I. ^{[1
]}

Mi, S. B. ^{[1
]}

Petraru, A. ^{[1
]}

Jia, C. L. ^{[1
]}

Poppe, U. ^{[1
]}

Urban, K. ^{[1
]}

机构：

[1] Forschungszentrum Julich, IFF, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.2338564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A multilayer thin film epitaxial passivation of single crystal MgO substrates was developed. YBa2Cu3O7-x films on the buffered MgO substrates demonstrate pure c-axis orientation, absence of in-plane disoriented grains, transition temperature T-c > 91 K, and critical current density J(c) similar to 5 MA/cm(2) at 77.4 K and were deposited in thicknesses of up to several micrometers without cracks. High-temperature superconductor multilayer flux transformers of 2 mu m thickness on the buffered MgO substrates demonstrated improved insulation between the superconducting layers and an increased dynamic range compared to flux transformers on SrTiO3 substrates. ((c))2006 American Institute of Physics.

引用

页数：3

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