Preparation of spinel ZnGa2O4 films on MgO substrates by the solvent evaporation epitaxy method

被引：25

作者：

Yan, Z

Koike, M

Takei, H

机构：

[1] Institute for Solid State Physics, University of Tokyo, Tokyo 106, 7-22-1 Roppongi, Minato-ku

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 165卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(96)00183-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Oriented thin films of ZnGa2O4 have been obtained on an MgO(001) substrate by the solvent evaporation epitaxy method. The results of EPMA suggest that the ratio of Zn to Ga is almost stoichiometric and nearly all of the solvent of PbF2 is removed. The crystal structure of the film is cubic spinel with a lattice constant of a = 8.33(3) Angstrom. The X-ray precession photographs prove that the a- and b-axes of the film are strictly parallel to those of the substrate, respectively.

引用

页码：183 / 186

页数：4

共 4 条

[1]

*JCPDS, 381240 JCPDS

[2] PREPARATION OF HIGH-TC BI-SR-CA-CU-O FILMS ON MGO SUBSTRATES BY THE METHOD OF SOLVENT EVAPORATION EPITAXY (SEE) [J].