Microstructure study of amorphous vanadium oxide thin films using raman spectroscopy

被引:102
作者
Lee, SH [1 ]
Cheong, HM
Je Seong, M
Liu, P
Tracy, CE
Mascarenhas, A
Pitts, JR
Deb, SK
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Sogang Univ, Dept Phys, Seoul 121742, South Korea
关键词
D O I
10.1063/1.1495074
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microstructural changes of amorphous V2O5 films with lithium intercalation are studied using Raman-scattering measurements. The Raman spectra of as-deposited films show two broad peaks around at 520 and 650 cm(-1), due to the stretching modes of the V-3-O and V-2-O bonds, respectively, and a relatively sharp peak at 1027 cm(-1) due to the V5+=O stretching mode of terminal oxygen atoms. In addition, there is a peak at 932 cm(-1) that we attribute to the V4+=O bonds. Comparison of the Raman spectra of V2O5 films with different oxygen deficiencies confirms this assignment. This Raman peak due to the stretching mode of the V4+=O bonds develops and shifts toward lower frequencies with increasing lithium concentration. Comparison to results from gasochromic hydrogen insertion indicates that the 932 cm(-1) Raman peak is not a result of vibrations which involve Li or H atoms. We propose that the V4+=O bonds are created by two different mechanisms: a direct conversion from V5+=O bonds and the breaking of the single oxygen bonds involving V4+ ions. (C) 2002 American Institute of Physics.
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页码:1893 / 1897
页数:5
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