Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN

被引：26

作者：

Liang, W ^{[1
]}

Tsen, KT

Ferry, DK

Lu, H

Schaff, WJ

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 18期

关键词：

D O I：

10.1063/1.1739509

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nonequilibrium electron transport in a high-quality, single-crystal, wurtzite structure InN thin film grown on GaN has been investigated by picosecond Raman spectroscopy. Our experimental results show that an electron drift velocity as high as (5.0+/-0.5)x10(7) cm/s can be achieved at T=300 K. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric-field intensity inside our InN thin-film system is about 75 kV/cm. (C) 2004 American Institute of Physics.

引用

页码：3681 / 3683

页数：3

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