Defect photoluminescence in polycrystalline diamond films grown by arc-jet chemical-vapor deposition

被引：11

作者：

Lal, S ^{[1
]}

Dallas, T ^{[1
]}

Yi, S ^{[1
]}

Gangopadhyay, S ^{[1
]}

Holtz, M ^{[1
]}

Anderson, FG ^{[1
]}

机构：

[1] UNIV VERMONT,DEPT PHYS,BURLINGTON,VT 05405

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.54.13428

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied a series of sharp photoluminescence emission lines between 1.65 and 1.80 eV in synthetic diamond films. The series of lines is decomposed into a set of parent lines plus vibrational sidebands spaced 24 meV apart. This energy does not correspond to any phonons with high density of states in the diamond crystal. The relative intensities of the main lines exhibit no temperature dependence (between 20 and 160 Ii), implying ground-state splitting. The narrow linewidth and temperature-independent emission energy imply only weak interaction with the diamond host The temperature-dependence of the linewidth is well described by thermal broadening. We attribute the emission to optical centers as a consequence of tungsten incorporation into the diamond film. The tungsten originates from the electrode during deposition.

引用

页码：13428 / 13431

页数：4

共 22 条

[1]

ANDERSON F, UNPUB

[2]

ANDERSON RJ, 1996, B AM PHYS SOC, V41, P438

[3] THE ORIGIN OF THE BROAD-BAND LUMINESCENCE AND THE EFFECT OF NITROGEN DOPING ON THE OPTICAL-PROPERTIES OF DIAMOND FILMS [J].