The role of point defects and arsenic precipitates in carrier trapping and recombination in low-temperature grown GaAs

被引：100

作者：

Lochtefeld, AJ ^{[1
]}

Melloch, MR ^{[1
]}

Chang, JCP ^{[1
]}

HArmon, ES ^{[1
]}

机构：

[1] MELLWOOD LABS INC,W LAFAYETTE,IN 47906

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 10期

关键词：

D O I：

10.1063/1.116909

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs epilayers were grown with a wide range of excess arsenic concentrations and subjected to various anneals to study the role of the point defects and arsenic precipitates in carrier trapping and recombination. Prior to anneal, the point defects rapidly trap photogenerated electrons and holes-usually on subpicosecond time scales. However, full electron-hole recombination occurs on a significantly longer time scale, After anneal, the full electron-hole recombination lifetime appears to be greatly reduced, indicating that the arsenic precipitates play a significant role. (C) 1996 American Institute of Physics.

引用

页码：1465 / 1467

页数：3

共 20 条

[1]

Carin L., 1993, IEEE Microwave and Guided Wave Letters, V3, P339, DOI 10.1109/75.244872

[2] SUBPICOSECOND ELECTRIC-FIELD DYNAMICS IN LOW-TEMPERATURE-GROWN GAAS OBSERVED BY REFLECTIVE ELECTROOPTIC SAMPLING [J].