High-performance pentacene thin-film transistors with high dielectric constant gate insulators

被引：24

作者：

Kitamura, M.

Arakawa, Y.

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 22期

关键词：

D O I：

10.1063/1.2400399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pentacene thin-film transistors (TFTs) with titanium silicon oxide (Ti1-xSixO2) gate insulator have been fabricated to realize high field-effect mobility at practical voltages. The Ti1-xSixO2 films deposited by rf sputtering exhibited a flat surface and high dielectric constant. The pentacene TFT with the Ti1-xSixO2 gate insulator had high performance with a threshold voltage of -1.6 V, an inverse subthreshold slope of 0.13 V/decade, and a current on/off ratio of 10(7) at a voltage of -10 V. The field-effect mobilities of higher than 1 cm(2)/V s were obtained in the whole voltage range of -2 to -15 V.

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页数：3

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