Antiferroelectric PbZrO3 films prepared by sol-gel processing

Antiferroelectric lead zirconate films with different thicknesses (0.3 to approximate to 1 mu m) were prepared by the sol-gel method. The films were deposited on Pt/TiO2/Si and TiO2/Pt/TiO2/SiO2/Si substrates using a spin coating process. The preferred orientation and the perovskite phase content of the films were studied using X-ray diffraction analysis (XRD). Scanning electron microscopy (SEM) was used for microstructural characterization of the films. Dielectric properties were measured as a function of the temperature and frequency. Antiferroelectricity in the films was confirmed by dielectric double hysteresis loops at room temperature. The influence of precursor and processing parameters on cracking tendency and electrical characteristics of the sol-gel derived lead zirconate films were investigated.