Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure

被引:266
作者
Motsnyi, VF
De Boeck, J
Das, J
Van Roy, W
Borghs, G
Goovaerts, E
Safarov, VI
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Univ Instelling Antwerp, B-2610 Antwerp, Belgium
[3] Fac Sci Luminy, Dept Phys, GPEC, F-13288 Marseille, France
关键词
D O I
10.1063/1.1491010
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate experimentally the electrical electron spin injection from a ferromagnetic metal/tunnel barrier contact into a III-V semiconductor light emitting diode (LED). The injected electrons have in-plane spin orientation. By applying a relatively small oblique external magnetic field this spin orientation within the semiconductor can be manipulated to have a nonzero out-of-plane component. By measuring the resulting circular polarization of the emitted light, we observe injected spin polarization in excess of 9% at 80 K in a CoFe/AlOx/(Al,Ga)As/GaAs surface-emitting spin-LED. (C) 2002 American Institute of Physics.
引用
收藏
页码:265 / 267
页数:3
相关论文
共 17 条
  • [1] OBSERVATION OF SPIN-POLARIZED-ELECTRON TUNNELING FROM A FERROMAGNET INTO GAAS
    ALVARADO, SF
    RENAUD, P
    [J]. PHYSICAL REVIEW LETTERS, 1992, 68 (09) : 1387 - 1390
  • [2] Low-resistance magnetic tunnel junctions by in situ natural oxidation
    Boeve, H
    De Boeck, J
    Borghs, G
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 482 - 487
  • [3] D'yakonov M., 1975, SOV PHYS JETP, V40, P950
  • [4] DYAKONOV MI, 1971, SOV PHYS JETP-USSR, V33, P1053
  • [5] DYKONOV MI, 1984, OPTICAL ORIENTATION, P11
  • [6] Injection and detection of a spin-polarized current in a light-emitting diode
    Fiederling, R
    Keim, M
    Reuscher, G
    Ossau, W
    Schmidt, G
    Waag, A
    Molenkamp, LW
    [J]. NATURE, 1999, 402 (6763) : 787 - 790
  • [7] Experimental search for the electrical spin injection in a semiconductor
    Filip, AT
    Hoving, BH
    Jedema, FJ
    van Wees, BJ
    [J]. PHYSICAL REVIEW B, 2000, 62 (15) : 9996 - 9999
  • [8] TUNNELING BETWEEN FERROMAGNETIC-FILMS
    JULLIERE, M
    [J]. PHYSICS LETTERS A, 1975, 54 (03) : 225 - 226
  • [9] Spatially resolved spin-injection probability for gallium arsenide
    LaBella, VP
    Bullock, DW
    Ding, Z
    Emery, C
    Venkatesan, A
    Oliver, WF
    Salamo, GJ
    Thibado, PM
    Mortazavi, M
    [J]. SCIENCE, 2001, 292 (5521) : 1518 - 1521
  • [10] Bias voltage and temperature dependence of magnetotunneling effect
    Lu, Y
    Li, XW
    Xiao, G
    Altman, RA
    Gallagher, WJ
    Marley, A
    Roche, K
    Parkin, S
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6515 - 6517