Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates

被引：12

作者：

Benyoucef, M

Kuball, M

Beaumont, B

Bousquet, V

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 13期

关键词：

D O I：

10.1063/1.1509860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double epitaxial lateral overgrown (D-ELO) GaN grown by metalorganic vapor phase epitaxy on sapphire substrates was characterized using Raman mapping and finite element analysis. Reductions in stress variations at the D-ELO top surface with respect to single ELO GaN were achieved. Stress near the top surface was mainly attributed to the presence of voids on top of the upper dielectric mask. (C) 2002 American Institute of Physics.

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页码：2370 / 2372

页数：3

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