Reduction of diffraction effect of UV exposure on SU-8 negative thick photoresist by air gap elimination

被引:105
作者
Chuang, YJ [1 ]
Tseng, FG [1 ]
Lin, WK [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2002年 / 8卷 / 4-5期
关键词
High Aspect Ratio; Diffraction Effect; Light Diffraction; Index Match; Pattern Width;
D O I
10.1007/s00542-002-0176-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper reports a novel way to compensate the air gap between photomask and photoresist for eliminating UV light diffraction on photoresist, which greatly increases the sidewall straightness of high-aspect-ratio resist structures. In this research, SU-8 negative tone photoresist was used for experiments, and glycerol was employed as an index match material for bridging air gap between photomask and photoresist during exposure. Results showed that a high aspect ratio wall structure of 156 mum thick and 25 mum wide had a 45% pattern width error when exposed under 100 pm air gap, while glycerol compensated process accomplished a straight resist wall without appreciable error. This method is simple and cheap to employ, compared to the usage of costly thick-photoresist-film spinner for resist planarization. Numerical simulation on the diffraction effect upon the structure wall has also been conducted. The calculated and experiment wall profiles showed similarity in trend.
引用
收藏
页码:308 / 313
页数:6
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