Antimony diffusion in strained and relaxed Si1-xGex

Following our preliminary report of studies of antimony diffusion in silicon-germanium alloys [1], we now publish our full report of the diffusion profiles and our analysis together with TEM studies of the perfection of the Si1-xGex layers. The diffusion of antimony is characterised by a higher diffusivity in the alloy than in silicon from which we infer a higher vacancy mobility and/or vacancy concentration in Si1-xGex than in Si.