W-band receiver module using indium phosphide and gallium arsenide MMICS

This paper describes a low-noise, high-gain single-side-band, downconverting receiver module developed for point-to-point telecommunications ill the 82-104-GHz range. Two indium phosphide (InP) and two gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) are used in the multi-chip module. For RF frequencies in the 82-104-GHz range and within a 1-3-GHz IF band, the receiver exhibits a typical single-sideband down-conversion gain between 15 and 20 dB and a typical noise figure of between 4 and 5 dB. In the same frequency range. the suppression of the unwanted sideband is typically -15 dB or more. (C) 2004 Wiley Periodicals. Inc.