GaN/AlGaN ultraviolet/infrared dual-band detector

被引：67

作者：

Ariyawansa, G.

Rinzan, M. B. M.

Alevli, M.

Strassburg, M.

Dietz, N.

Perera, A. G. U. ^{[1
]}

Matsik, S. G.

Asghar, A.

Ferguson, I. T.

Luo, H.

Bezinger, A.

Liu, H. C.

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] NDP Optron, Mableton, GA 30126 USA

[3] Georgia Inst Technol, Sch Elect & Engn, Atlanta, GA 30332 USA

[4] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 09期

关键词：

D O I：

10.1063/1.2345226

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Group III-V wide band gap materials are widely used in developing solar blind, radiation-hard, high speed optoelectronic devices. A device detecting both ultraviolet (UV) and infrared (IR) simultaneously will be an important tool in fire fighting and for military and other applications. Here a heterojunction UV/IR dual-band detector, where the UV/IR detection is due to interband/intraband transitions in the Al0.026Ga0.974N barrier and GaN emitter, respectively, is reported. The UV threshold observed at 360 nm corresponds to the band gap of the Al0.026Ga0.974N barrier, and the IR response obtained in the range of 8-14 mu m is in good agreement with the free carrier absorption model. (c) 2006 American Institute of Physics.

引用

页数：3

共 19 条

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