High-quality MgB2 thin films in situ grown by dc magnetron sputtering

被引:36
作者
Vaglio, R [1 ]
Maglione, MG
Di Capua, R
机构
[1] Univ Naples Federico II, INFM, Naples, Italy
[2] Univ Naples Federico II, Dipartimento Sci Fis, Naples, Italy
关键词
D O I
10.1088/0953-2048/15/8/312
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films of the recently discovered magnesium diboride (MgB2) intermetallic supercon duct in g compound have been grown using a magnetron sputtering deposition technique followed by in situ annealing at 830 degreesC. High-quality films were obtained on both sapphire and MgO substrates. The best films showed a maximum T-c of 35 K (onset), a transition width of 0.5 K, a residual resisitivity ratio up to 1.6, a low-temperature critical current density J(c) > 10(6) A cm(-2) and an anisotropic critical field with y congruent to 2.5 close to the values obtained for single crystals. The preparation technique can be easily scaled to produce large-area in situ films.
引用
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页码:1236 / 1239
页数:4
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