Is ArF the final wavelength?

被引:10
作者
Conley, W [1 ]
Bendik, J [1 ]
机构
[1] Motorola Inc, APRDL Opt Lithog Grp, Austin, TX USA
来源
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2 | 2004年 / 5376卷
关键词
D O I
10.1117/12.537609
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
The lithography prognosticator of the early 1980's declared the end of optics for sub-0.5mum imaging. However, significant improvements in optics, photoresist and mask technology continued through the mercury lamp lines (436, 405 & 365nm) and into laser bands of 248nm and to 193nm. As each wavelength matured, innovative optical solutions and further improvements in photoresist technology have demonstrated that extending imaging resolution is possible thus further reducing k(1). Several authors have recently discussed manufacturing imaging solutions for sub-0.3k(1) and the integration challenges. Our industry will continue to focus on the most cost effective solution. What continues to motivate lithographers to discover new and innovative lithography solutions? Recent publications have demonstrated sub 0.30 k(1) imaging. The answer is cost. The development of new tooling, masks and even photoresist platforms impacts cost. The switch from KrF to ArF imaging materials has a significant impact on process integration. The requirements stated in the ITRS roadmap for current and future technology nodes are very aggressive. Therefore, it is likely that high NA in combination with enhancement techniques will continue further for aggressive imaging solutions.
引用
收藏
页码:16 / 20
页数:5
相关论文
共 9 条
[1]
BRUNNER T, 2003, RETECH NOV
[2]
DAMMEL R, P SPIE, V4690, P1
[3]
DUSA M, COMMUNICATION
[4]
FLAGELLO D, 2004, INT SEMATECH IMM LIT
[5]
MACK C, P SPIE, V5203, P1
[6]
OHMURA Y, P SPIE, V5040, P781
[7]
SILVERMAN P, P SPIE, V4691, P1
[8]
SMITH B, 2004, INT SEMATECH IMM WOR
[9]
1965, ELECTRONICS, V38