Evidence of band bending observed by electroabsorption studies in polymer light emitting device with ionomer/Al or LiF/Al cathode

被引：66

作者：

Yoon, J

Kim, JJ

Lee, TW

Park, OO

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Korea Adv Inst Sci & Technol, Dept Chem Engn, Taejon 305701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期

关键词：

D O I：

10.1063/1.126282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electroabsorption studies of indium-tin-oxide (ITO)/poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] insulating layer/Al light-emitting devices. An ionomer and LiF were used as the insulating layer. The internal electric field was nullified at the same bias voltage of 0.6 V for different cathodes of Al, ionomer/Al, and LiF/Al. The bias voltage is close to the work-function difference between ITO and Al. Average electric field in the emitting layer was reduced by inserting the insulating layers. On the contrary, current density was increased significantly. These observations suggest band bending in the devices with ionomer/Al or LiF/Al cathode. (C) 2000 American Institute of Physics. [S0003-6951(00)01116-5].

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页码：2152 / 2154

页数：3

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