Quantifying the Semiconducting Fraction in Single-Walled Carbon Nanotube Samples through Comparative Atomic Force and Photoluminescence Microscopies

被引:53
作者
Naumov, Anton V. [3 ]
Kuznetsov, Oleg A. [4 ]
Harutyunyan, Avetik R. [4 ]
Green, Alexander A. [5 ]
Hersam, Mark C. [5 ]
Resasco, Daniel E. [6 ]
Nikolaev, Pavel N. [7 ]
Weisman, R. Bruce [1 ,2 ]
机构
[1] Rice Univ, Dept Chem, Houston, TX 77005 USA
[2] Rice Univ, Richard E Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA
[3] Rice Univ, Appl Phys Program, Houston, TX 77005 USA
[4] Honda Res Inst USA Inc, Columbus, OH 43212 USA
[5] Northwestern Univ, Dept Chem, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[6] Univ Oklahoma, Sch Chem Biol & Mat Engn, Norman, OK 73019 USA
[7] NASA, Lyndon B Johnson Space Ctr, ERC Inc, Houston, TX 77058 USA
基金
美国国家科学基金会;
关键词
ELECTRONIC-STRUCTURE; GROWTH; TRANSPARENT; ENRICHMENT; CO; DISPROPORTIONATION; FLUORESCENCE; SEPARATION; DIAMETER; SWNTS;
D O I
10.1021/nl9014342
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A new method was used to measure the fraction of semiconducting nanotubes in various as-grown or processed single-walled carbon nanotube (SWCNT) samples. SWCNT number densities were compared in images from near-IR photoluminescence (semiconducting species) and AFM (all species) to compute the semiconducting fraction. The results show large variations among growth methods and effective sorting by density gradient ultracentrifugation. This counting-based method provides important information about SWCNT sample compositions that can guide controlled growth methods and help calibrate bulk characterization techniques.
引用
收藏
页码:3203 / 3208
页数:6
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