Impurity-doping-induced ferroelectricity in the frustrated antiferromagnet CuFeO2

被引:158
作者
Seki, S. [1 ]
Yamasaki, Y.
Shiomi, Y.
Iguchi, S.
Onose, Y.
Tokura, Y.
机构
[1] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan
[2] JST, ERATO, Multiferroics Project, Tokyo 1138656, Japan
关键词
D O I
10.1103/PhysRevB.75.100403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dielectric responses have been investigated on the triangular-lattice antiferromagnet CuFeO2 and its site-diluted analogs CuFe1-xAlxO2 (x=0.01 and 0.02) with and without the application of the magnetic field. We have found a ferroelectric behavior at zero magnetic field for x=0.02. At any doping level, the onset field of the ferroelectricity always coincides with that of the noncollinear magnetic structure while the transition field dramatically decreases to zero field with Al doping. The results imply the further possibility of producing the ferroelectricity by modifying frustrated spin structure in terms of site doping and external magnetic field.
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页数:4
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