Characterization of the bipolar mobility in polar materials by interband photoexcitation

被引：8

作者：

Bernasconi, P

Montemezzani, G

Biaggio, I

Gunter, P

机构：

[1] Nonlinear Optics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology, ETH Hönggerberg

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.56.12196

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a purely optical method to determine the effective electron-hole mobility ratio in electro-optic, photoconductive materials. Our technique combines observations of the dynamics of the interband photoconductivity with the determination of the anisotropy of the response time of a light induced space-charge electric field. In KNbO3 single crystals we measured a trap-limited mobility ratio mu(h)(c)/mu(e)(c) = 1.25 +/- 0.15 along the crystallographic c axis and mu(h)(b)/mu(e)(b) = 2.0 +/- 0.4 along the b axis.

引用

页码：12196 / 12200

页数：5

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