The oxygen-related luminescence centers in AlN ceramics

被引：7

作者：

Berzina, B ^{[1
]}

Trinkler, L ^{[1
]}

Palcevskis, E ^{[1
]}

Sils, J ^{[1
]}

机构：

[1] LATVIAN ACAD SCI,INST INORGAN CHEM,LV-2169 RIGA,LATVIA

来源：

PROCEEDINGS OF THE 13TH INTERNATIONAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS - ICDIM 96 | 1997年 / 239-卷

关键词：

aluminum nitride; ceramics; defects; luminescence; electronic structure;

D O I：

10.4028/www.scientific.net/MSF.239-241.145

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Luminescence characteristics of oxygen-related defects are studied in AlN ceramics. Original results concerning photoluminescence excitation and photostimulated luminescence of irradiated samples are explained in terms of the proposed luminescence mechanism.

引用

页码：145 / 148

页数：4

共 5 条

[1] ON THE NATURE OF THE OXYGEN-RELATED DEFECT IN ALUMINUM NITRIDE [J].

HARRIS, JH ;

YOUNGMAN, RA ;

TELLER, RG .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (08) :1763-1773

[2]

LAUGHIN S, 1993, APPL PHYS LETT, V63, P1182

[3]

PALCEVSKIS E, 1994, LATVIAN ACAD SCI, P113

[4]

PASTERNAK J, 1986, PHYS STATUS SOLIDI, V26, P51

[5] LUMINESCENCE STUDIES OF OXYGEN-RELATED DEFECTS IN ALUMINUM NITRIDE [J].

YOUNGMAN, RA ;

HARRIS, JH .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) :3238-3246

← 1 →