Space homogeneous solutions to the Cauchy problem for semiconductor Boltzmann equations

被引:9
作者
Majorana, A
Marano, SA
机构
[1] Department of Mathematics, University of Catania, 95125 Catania
关键词
Boltzmann equation; semiconductor; Dirac distribution; bounded continuous solution; existence and uniqueness;
D O I
10.1137/S0036141095291397
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
The nonlinear Boltzmann equation for an electron gas in a semiconductor is investigated. Same meaningful properties of the collision operator are first presented. A large class of kernels is allowed. Then the global existence and uniqueness of bounded, continuous, space-independent solutions to the related Cauchy problem is performed. Finally, the conservation of mass is examined.
引用
收藏
页码:1294 / 1308
页数:15
相关论文
共 21 条
[1]  
Abramowitz M., 1972, HDB MATH FUNCTIONS F
[2]  
Adams A, 2003, SOBOLEV SPACES
[3]  
BLAKEMORE JS, 1987, SEMICONDUCTOR STATIS
[4]  
Cercignani C., 1988, Applied mathematical sciences
[5]  
Chapman S., 1991, The Mathematical Theory of Non-Uniform Gases
[6]  
Corduneanu C., 1973, Mathematics in Science and Engineering
[7]   ON THE CAUCHY-PROBLEM FOR BOLTZMANN EQUATIONS - GLOBAL EXISTENCE AND WEAK STABILITY [J].
DIPERNA, RJ ;
LIONS, PL .
ANNALS OF MATHEMATICS, 1989, 130 (02) :321-366
[8]  
GELFAND IM, 1964, GENERALIZED FUNCTION, V1
[9]  
Haaser N.B., 1991, REAL ANAL
[10]  
Jacoboni C., 1989, The Monte Carlo method for semiconductor device simulation, V1st, DOI DOI 10.1007/978-3-7091-6963-6