Suppression of Auger Processes in Confined Structures

被引：401

作者：

Cragg, George E. ^{[1
]}

Efros, Alexander L. ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 01期

关键词：

Auger processes; quantum dot; quantum well; quantum wire; nanocrystal blinking; laser threshold; QUANTUM-DOT BLINKING; SEMICONDUCTOR NANOCRYSTALS; WELL LASERS; INTERMITTENCY; SILICON;

D O I：

10.1021/nl903592h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We explore how the size and shape of the microscopic confinement potential affects the nonradiative Auger decay rate of confined carriers. Calculations conducted in the two-band, effective mass Kane model unambiguously show that smoothing out the confinement Potential could reduce the rate by more than 3 orders of magnitude relative to the rate in structures with abruptly terminating boundaries. As the confinement potential width is increased, the calculated rate decreases overall, exhibiting very deep minima at regular widths. Such minima suggest that nanocrystals of "magic sizes" can exist for which nonradiative Auger processes are strongly suppressed.

引用

页码：313 / 317

页数：5

共 27 条

[1]

Abakumov V. N., 1991, Nonradiative Recombination in Semiconductors

[2] Evidence for a thermal contribution to emission intermittency in single CdSe/CdS core/shell nanocrystals [J].