Energy level alignment at organic/metal interfaces: Dipole and ionization potential

被引：144

作者：

Peisert, H ^{[1
]}

Knupfer, M ^{[1
]}

Fink, J ^{[1
]}

机构：

[1] Inst Solid State & Mat Res Dresden, D-01069 Dresden, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 13期

关键词：

D O I：

10.1063/1.1509472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a systematic study of the energy level alignment at the interfaces between gold and organic semiconductors. It is shown that there are at least two leading contributions to the potential drop (dipole) across the metal/organic interface: A modification of the metal work function due to the adsorption of the organic molecules and a potential change in the organic semiconductor. (C) 2002 American Institute of Physics.

引用

页码：2400 / 2402

页数：3

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